| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 011301, 2018 | 342 | 2018 |
| Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 209 | 2010 |
| Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 151 | 2018 |
| Quantifying pulsed laser induced damage to graphene M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ... Applied Physics Letters 99 (21), 211909, 2011 | 115 | 2011 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468-P470, 2016 | 89 | 2016 |
| Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 182105, 2016 | 87 | 2016 |
| Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ... IEEE Electron Device Letters 33 (1), 23-25, 2011 | 85 | 2011 |
| Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45 (4), 2031-2037, 2016 | 68 | 2016 |
| Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 132103, 2016 | 67 | 2016 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 56 | 2014 |
| Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders A Wang, MJ Tadjer, F Calle Semiconductor science and technology 28 (5), 055010, 2013 | 56 | 2013 |
| Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ... Applied Physics Letters 103 (3), 033509, 2013 | 53 | 2013 |
| 2300V reverse breakdown voltage Ga2O3 schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 7 (5), Q92-Q96, 2018 | 50 | 2018 |
| Band alignments of atomic layer deposited ZrO2 and HfO2 high-k dielectrics with (-201) β-Ga2O3 VD Wheeler, DI Shahin, MJ Tadjer, CR Eddy ECS Journal of Solid State Science and Technology 6 (2), Q3052-Q3055, 2017 | 46 | 2017 |
| Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ... IEEE Electron Device Letters 34 (9), 1115-1117, 2013 | 46 | 2013 |
| Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22), 220901, 2018 | 45 | 2018 |
| Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle IEEE Transactions on Electron Devices 60 (12), 4105-4111, 2013 | 44 | 2013 |
| An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching TJ Anderson, MJ Tadjer, MA Mastro, JK Hite, KD Hobart, CR Eddy, FJ Kub IEEE Electron Device Letters 30 (12), 1251-1253, 2009 | 42 | 2009 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 38 | 2017 |
| Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake S Oh, MA Mastro, MJ Tadjer, J Kim ECS Journal of Solid State Science and Technology 6 (8), Q79-Q83, 2017 | 37 | 2017 |
Travis J. AndersonNaval Research LaboratoryDirección de correo verificada de nrl.navy.mil
