Magali Estribeau
Magali Estribeau
Research Scientist, ISAE, Université de Toulouse
Dirección de correo verificada de isae.fr
TítuloCitado porAño
Fast MTF measurement of CMOS imagers using ISO 12333 slanted-edge methodology
M Estribeau, P Magnan
Optical Systems Design, 243-252, 2004
1092004
Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose
V Goiffon, M Estribeau, O Marcelot, P Cervantes, P Magnan, M Gaillardin, ...
Nuclear Science, IEEE Transactions on 59 (6), 2878-2887, 2012
622012
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors
V Goiffon, C Virmontois, P Magnan, P Cervantes, S Place, M Gaillardin, ...
Nuclear Science, IEEE Transactions on 59 (4), 918-926, 2012
402012
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology
V Goiffon, M Estribeau, P Magnan
Electron Devices, IEEE Transactions on 56 (11), 2594-2601, 2009
402009
X-Ray and Particle Image Sensors-Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology
V Goiffon, M Estribeau, P Magnan
IEEE Transactions on Electron Devices 56 (11), 2594, 2009
40*2009
Theoretical models of modulation transfer function, quantum efficiency, and crosstalk for CCD and CMOS image sensors
I Djite, M Estribeau, P Magnan, G Rolland, S Petit, O Saint-Pe
Electron Devices, IEEE Transactions on 59 (3), 729-737, 2012
392012
Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors
V Goiffon, M Estribeau, J Michelot, P Cervantes, A Pelamatti, O Marcelot, ...
IEEE Journal of the Electron Devices Society 2 (4), 65-76, 2014
342014
Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors
A Pelamatti, V Goiffon, M Estribeau, P Cervantes, P Magnan
IEEE Electron Device Letters 34 (7), 900-902, 2013
342013
Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors
V Goiffon, M Estribeau, P Cervantes, R Molina, M Gaillardin, P Magnan
IEEE Transactions on Nuclear Science 61 (6), 3290-3301, 2014
292014
Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes
V Goiffon, C Virmontois, P Magnan, P Cervantes, F Corbiere, M Estribeau, ...
Remote Sensing, 78261S-78261S-12, 2010
262010
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes
V Goiffon, P Cervantes, C Virmontois, F Corbière, P Magnan, M Estribeau
Nuclear Science, IEEE Transactions on 58 (6), 3076-3084, 2011
222011
Theoretical evaluation of MTF and charge collection efficiency in CCD and CMOS image sensors
I Djité, P Magnan, M Estribeau, G Rolland, S Petit, O Saint-Pé
SPIE Optical Engineering+ Applications, 742705-742705-12, 2009
202009
Fast MTF measurement of CMOS imagers at the chip level using ISO 12233 slanted-edge methodology
M Estribeau, P Magnan
Proceedings of SPIE 5570, 557-567, 2004
202004
Pixel crosstalk and correlation with modulation transfer function of CMOS image sensor
M Estribeau, P Magnan
Electronic Imaging 2005, 98-108, 2005
162005
Radiation effects in CMOS isolation oxides: Differences and similarities with thermal oxides
M Gaillardin, V Goiffon, C Marcandella, S Girard, M Martinez, P Paillet, ...
IEEE, 2013
142013
Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI
O Marcelot, M Estribeau, V Goiffon, P Martin-Gonthier, F Corbiere, ...
IEEE Transactions on Electron Devices 61, 844-849, 2014
132014
ISAE, Université de Toulouse, Toulouse F-31055, France.
O Marcelot, M Estribeau, V Goiffon, P Martin-Gonthier, F Corbire, R Molina, ...
IEEE, 2014
13*2014
Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors
A Pelamatti, JM Belloir, C Messien, V Goiffon, M Estribeau, P Magnan, ...
IEEE Transactions on Electron Devices 62 (4), 1200-1207, 2015
122015
Vulnerability of CMOS image sensors in megajoule class laser harsh environment
V Goiffon, S Girard, A Chabane, P Paillet, P Magnan, P Cervantes, ...
Optics express 20 (18), 20028-20042, 2012
102012
Dynamic range optimisation of CMOS image sensors dedicated to space applications
P Martin-Gonthier, P Magnan, F Corbière, M Estribeau, N Huger, ...
Remote Sensing, 67440U-67440U-11, 2007
92007
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20