Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators CD Dimitrakopoulos, S Purushothaman, J Kymissis, A Callegari, JM Shaw
Science 283 (5403), 822-824, 1999
1033 1999 Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
350 2001 Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
339 2001 Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
332 2003 Liquid crystal alignment on carbonaceous surfaces with orientational order J Stöhr, MG Samant, J Lüning, AC Callegari, P Chaudhari, JP Doyle, ...
Science 292 (5525), 2299-2302, 2001
319 2001 Diamond-like carbon films from a hydrocarbon helium plasma FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ...
US Patent 5,470,661, 1995
299 1995 Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same LP Buchwalter, AC Callegari, SA Cohen, TO Graham, JP Hummel, ...
US Patent 6,184,121, 2001
250 2001 A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006
244 2006 Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n ‐type GaAs YC Shih, M Murakami, EL Wilkie, AC Callegari
Journal of applied physics 62 (2), 582-590, 1987
217 1987 Sputter deposition of hydrogenated amorphous carbon film and applications thereof ED Babich, AC Callegari, FE Doany, S Purushothaman
US Patent 5,830,332, 1998
210 1998 Methods for forming metal oxide layers with enhanced purity AC Callegari, FE Doany, EP Gousev, TH Zabel
US Patent 6,395,650, 2002
206 2002 Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment A Callegari, PD Hoh, DA Buchanan, D Lacey
Applied Physics Letters 54 (4), 332-334, 1989
164 1989 System for detecting a fault in a communication system PS Henry, I Gerszberg
US Patent 10,291,334, 2019
156 * 2019 Microstructure studies of AuNiGe Ohmic contacts to n ‐type GaAs M Murakami, KD Childs, JM Baker, A Callegari
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
142 1986 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
137 2000 Method of film deposition, and fabrication of structures AC Callegari, DA Neumayer
US Patent 6,664,186, 2003
132 2003 Low temperature thin film transistor fabrication AC Callegari, CD Dimitrakopoulos, S Purushothaman
US Patent 6,207,472, 2001
118 2001 Charge trapping in high k gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti
Digest. International Electron Devices Meeting,, 517-520, 2002
115 2002 Inversion mode JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ...
Applied Physics Letters 92 (15), 153508, 2008
108 2008 CVD tantalum compounds for FET get electrodes V Narayanan, F McFeely, K Milkove, J Yurkas, M Copel, P Jamison, ...
US Patent App. 10/712,575, 2005
101 2005 
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